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Photodiode

technology Maturity 11-13 Next article →

A photodiode is a semiconductor diode that is sensitive to photon radiation. This radiation includes visible light, infrared, and ultraviolet rays. It can even detect high-energy X-rays and gamma rays.

Photodiode symbol
Photodiode symbol

When these photons are absorbed, the device produces an electrical current. This ability makes photodiodes vital for detecting and measuring light. They are also used to generate electrical power in solar cells. Because they work across the electromagnetic spectrum, they are used in everything from simple light cells to complex gamma ray spectrometers.

The mechanism of a photodiode relies on the inner photoelectric effect. A photodiode typically uses a PIN structure or a p–n junction. When a photon with sufficient energy strikes the diode, it creates an electron–hole pair. These are called charge carriers. If this absorption happens in the depletion region, a built-in electric field takes over. This field sweeps the carriers away from the junction. The holes move toward the anode, while the electrons move toward the cathode. This movement creates a flow known as a photocurrent.

Photodiode operation-en
Photodiode operation-en

The total current is the sum of this photocurrent and the dark current. Dark current is the current that flows even when there is no light. To make a device more sensitive, engineers must minimize this dark current.

There are two primary ways to operate a photodiode: photovoltaic mode and photoconductive mode. In photovoltaic mode, there is zero bias applied to the device. In this state, the photocurrent flows into the anode through a short circuit to the cathode. If the circuit is opened or has a load impedance, a voltage builds up. This mode exploits the photovoltaic effect, which is the same principle used in solar cells. A traditional solar cell is essentially just a very large area photodiode. For the best power output, the cell operates at a voltage that keeps the forward current small compared to the photocurrent.

Photoconductive mode works differently because the diode is reverse biased. This means the cathode is driven positive compared to the anode. This mode is much faster than photovoltaic mode. The reverse bias increases the width of the depletion layer. This wider layer decreases the junction's capacitance. It also increases the region where the electric field can quickly collect electrons. However, photoconductive mode can have more electronic noise. This noise comes from dark current or avalanche effects. A high-quality PIN diode has very low leakage current, often less than 1 nA.

Some specialized devices build on these basic principles. An avalanche photodiode is optimized for high reverse bias. It operates near the reverse breakdown voltage. This allows each photo-generated carrier to be multiplied by avalanche breakdown. This process provides internal gain, which increases the device's responsivity.

Photodiode array chip
Photodiode array chip

Another related device is the phototransistor. A bipolar phototransistor was invented by John N. Shive at Bell Labs in 1948. It was not announced until 1950. In these devices, photons generate electrons in the base–collector junction. These electrons are then injected into the base, and the current is amplified by the transistor's gain.

PhotoTransistor
PhotoTransistor

While phototransistors have higher responsivity, they have longer response times than photodiodes.

The material used to build a photodiode is critical. The material's bandgap determines which photons have enough energy to create current.

Silicon is a common choice, working between 190 and 1100 nm. Silicon-based photodiodes generate less noise than germanium-based ones. Germanium works from 400 to 1700 nm. Other materials include Indium gallium arsenide for 800 to 2600 nm, and Lead(II) sulfide for wavelengths up to 3500 nm. Mercury cadmium telluride can detect even longer wavelengths, from 400 to 14000 nm. New materials like graphene and MoS2 are also emerging in research.

Understanding performance requires looking at several technical parameters. Spectral responsivity is the ratio of photocurrent to incident light power, measured in A/W. Quantum efficiency is the ratio of photogenerated carriers to incident photons. Response time is how quickly the detector reacts to light. This is affected by the transit-time spread and the RC time constant. Finally, noise-equivalent power (NEP) is the minimum optical power needed to generate a detectable current. This represents the minimum detectable power for the device. These factors combined determine how sensitive an optical receiver will be in real-world systems.

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🖼️ Images & Media (6)
File:Photodiode symbol.svg
Photodiode symbol.svg
File:Photodiode operation-en.svg
Photodiode operation-en.svg
File:IEEE 315-1975 (1993) 8.6.16.svg
IEEE 315-1975 (1993) 8.6.16.svg
File:PhotoTransistor.jpg
PhotoTransistor.jpg
File:Photodiode array chip.jpg
Photodiode array chip.jpg
File:Optical mouse chip detail.png
Optical mouse chip detail.png
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